2SB968

S MD Type Silicon PNP Epitaxial Planar Type 2SB968 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Possible to solder the radiation fin directly to printed cicuit board. High collector-emitter voltage VCEO. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 Large collector power dissipation PC. 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -50 -40 -5 -1.5 -3 10 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Collector-base cutoff curent Collector cutoff curent Emitter-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCBO VCEO ICBO ICEO IEBO hFE Testconditons IC = -1 mA, IE = 0 IC = -2 mA, IB = 0 VCB = -20 V,IE = 0 VCE = -10 V,IB = 0 VEB = -5 V, IC = 0 VCE = -5 V, IC = -1 A VCE = -5 V, IC = -1mA VCE(sat) IC = -1.5 A, IB = -0.15 A VBE(sat) IC = -2 A, IB = -0.2 A fT Cob VCE = -5 V, IC = -0.5 A , f = 200 MHz VCB = -20V , IE = 0 , f = 1.0MHz 150 45 80 10 -1 -1.5 V V MHz pF Min -50 -40 -1 -100 -10 220 Typ Max Unit V V ìA ìA ìA V hFE Classification Rank hFE Q 80 160 R 120 220 3 .8 0 www.kexin.com.cn 1