2SB970

SMD S MD Type Silicon PNP Epitaxial Planar Type 2SB970 Transistors IC SOT-23 Unit: mm Features Low collector-emitter saturation voltage VCE(sat). +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 insertion through the tape packing and the magazine packing. +0.1 1.3-0.1 Mini type package,allowing downsizing of the equipment and automatic 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -15 -10 -7 -.5 -1 200 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance * Pulse measurement. Symbol VCBO VCEO VEBO ICBO hFE Testconditons IC = -10 ìA, IE = 0 IC = -1 mA, IB = 0 IE = -10 ìA, IC = 0 VCB = -10 V, IE = 0 VCE = -2 V, IC = -0.5A 130 -0.16 -0.8 130 22 Min -15 -10 -7 -100 350 -0.3 -1.2 V V MHz pF Typ Max Unit V V V nA VCE(sat) IC = -0.4 A, IB = -8 mA VBE(sat) IC = -0.4 A, IB = -8 mA fT Cob VCB = -10 V, IE = 50 mA , f = 200 MHz VCB = -10V , IE = 0 , f = 1.0MHz hFE Classification Marking Rank hFE R 130 220 1R S 180 350 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1