2SC1622A

S MD Type NPN Silicon Epitaxial Transistor 2SC1622A SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm +0.1 2.4-0.1 High DC current gain. +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 120 120 5 50 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulse test: tp 350 ìs; d 0.02. Symbol ICBO IEBO hFE Testconditons VCB = 120V, IE=0 VEB = 5V, IC=0 VCE =6V , IC = 1mA VCE =6V , IC = 0.1mA VCE(sat) IC = 10mA , IB = 1mA VBE fT Cob VCE = 6V , IC = 1mA VCE = 6V , IE = -1mA VCB = 30V , IE = 0 , f = 1.0MHz 0.55 50 135 100 0.07 0.58 110 1.6 2.5 0.30 0.65 V V MHz pF 500 Min Typ Max 0.05 0.05 900 Unit ìA ìA hFE Classification Marking hFE D15 135 270 D16 200 400 D17 300 600 D18 450 900 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1