2SC2295

SMD S MD Type Silicon NPN Epitaxial Planar Type 2SC2295 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Optimum for RF amplification of FM/AM radios. High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 5 30 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Forward current transfer ratio Transition frequency Noise figure Reverse transfer impedance Reverse transfer capacitance Symbol ICBO hFE fT NF Zrb Cre Testconditons VCB = 10 V, IE = 0 VCB = 10 V, IC = -1 mA VCB = 10 V, IE = -1 mA, f = 200 MHz VCB = 10 V, IE = -1 mA, f = 5 MHz VCB = 10 V, IE = -1 mA, f = 2 MHz VCB = 10 V, Ic = -1 mA, f = 10.7 MHz 70 100 250 2.8 22 0.9 4.0 50 1.5 Min Typ Max 0.1 220 MHz dB Ù pF Unit ìA hFE Classification Marking hFE VB 70 140 VC 110 220 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1