2SC2405

SMD S MD Type Silicon PNP Epitaxial Planar Type 2SC2405 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 High forward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.1 1.3-0.1 Low noise voltage NV. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 35 35 5 50 100 200 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Base-emitter voltage Collector-base cutoff current Collector-emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Noise voltage Symbol VCBO VCEO VEBO VBE ICBO ICEO hFE Testconditons IC = 10 ìA, IE = 0 IC = 2 mA, IB = 0 IE = 10 ìA, IC = 0 VCE = 1 V, IC = 100 mA VCB = 10 V, IE = 0 VCE = 10 V, IB = 0 VCE = 5 V, IC = 2 mA 180 Min 35 35 5 0.7 1.0 0.1 1 700 0.6 200 110 V MHz mV Typ Max Unit V V V V ìA ìA VCE(sat) IC = 100 mA, IB = -10 mA fT NV VCB = 5 V, IE = -2 mA, f = 200 MHz VCE = 10 V, IC = 1 mA, GV = 80 dB Rg = 100 kÙ, Function = FLAT hFE Classification Marking hFE SR 180 360 SS 260 520 ST 360 700 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1