2SC2712

S MD Type Silicon NPN Epitaxial Type Transistor 2SC2712 SOT-23 Transistors Unit: mm Features High voltage and high current: VCEO = 50 V, IC = 150 mA (max) +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low noise: NF = 1dB (typ.), 10dB (max) 0.55 High hFE: hFE = 70 700 +0.1 1.3-0.1 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50 5 150 30 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Noise figure Transition frequency Symbol ICBO IEBO hFE Testconditons VCB = 60 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2 mA 70 0.1 2 1 80 Min Typ Max 0.1 0.1 700 0.25 3.5 10 V pF dB MHz Unit A A VCE (sat) IC = 100 mA, IB = 10 mA Cob NF fT VCB = 10V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA , f = 1 KHz, RG=10KÙ VCE = 10V, IC =1 mA hFE Classification Marking Rank hFE 70 LO O 140 120 LY Y 240 LG GR 200 400 LL BL 350 700 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 S MD Type 2SC2712 Typlcal Characteristics Transistors Fig.1 Collector Emitter Voltage Fig.2 Collector Current Fig.3 Collector Current Fig.4 Collector Current Fig.5 Collector Current Fig.6 Base Emitter Voltage 2 www.kexin.com.cn SMD Type 2SC2712 Transistors Fig.7 Collector Current Fig.8 Collector Emitter Voltage Fig.9 Ambient Temperature www.kexin.com.cn 3