2SC2715

SMD S MD Type Silicon NPN Epitaxial 2SC2715 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz). Recommended for FM IF, OSC stage and AM CONV. IF stage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 4 50 10 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Collector-base time constant Power gain Symbol ICBO IEBO hFE Testconditons VCB = 35 V, IE = 0 VEB = 4 V, IC = 0 VCE = 12 V, IC = 2 mA 40 Min Typ Max 0.1 0.1 240 0.4 1 100 2 400 3.2 50 27 30 33 V V MHz pF ps dB Unit ìA ìA VCE (sat) IC = 10 mA, IB = 1 mA VBE fT Cob IC = 10 mA, IB = 1 mA VCE = 10V, IC = 1 mA VCB = 10 V, IE = 0 , f = 1 MHz Cc.rbb' VCE = 10V, IE = -1 mA , f = 30 MHz Gpe VCC = 6V, IE = -1 mA , f = 10.7 MHz hFE Classification Marking Rank hFE R 40 80 R O 70 140 Y 120 240 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1