2SC2859

SMD S MD Type Silicon NPN Epitaxial 2SC2859 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Excellent hFE linearity : hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA). 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 35 30 5 500 50 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE1 Testconditons VCB = 35 V, IE = 0 VEB = 5 V, IC = 0 VCE = 1V , IC = 100mA 70 25 0.1 0.8 300 7 0.25 1.0 V V MHz pF Min Typ Max 0.1 0.1 400 Unit ìA ìA hFE2 * VCE = 6V , IC = 400mA VCE (sat) IC = 100 mA, IB = 10 mA VBE fT Cob VCE = 1V, IC = 100 mA VCE = 6V, IC = 20 mA VCB = 6V, IE = 0 , f = 1 MHz * hFE 2 classification O: 25 min, Y: 40 min, GR: 70 min hFE Classification Marking hFE WO 70 140 WY 120 240 WG 200 400 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1