2SC2983

S MD Type NPN Silicon Epitaxial Transistor 2SC2983 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High Transiton Frequency: Ft=100MHz(TYP.) +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Base Current Total Power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC IB PC Rating 160 160 5 1.5 0.3 1 15 150 -55 to +150 Unit V V V A A W W Electrical Characteristics Ta = 25 Parameter collector cutoff current emitter cutoff current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC current Gain Collector-Emitter Saturation Voltage Base- Emitter Voltage Transition Frequency Collector Output Capacitance Symbol ICBO IEBO V(BR)CEO V(BR)EBO hFE VCE(sat) VBE fT cob Testconditons VCB=160V,IE=0 VEB=5V,IC=0 IC=10mA,IB=0 IE=1mA,IC=0 VCE=5V,IC=100mA IC=500mA,IB=50mA VCE=5V,IC=500mA VCE=10V,IC=100mA VCB=10V.IE=0,f=1MHz 100 25 160 5 70 240 1.5 1 V V MHz pF Min Typ Max 1 1 Unit ìA ìA V V hFE Classification Marking hFE O 70 to 140 Y 120 to 240 3 .8 0 www.kexin.com.cn 1