2SC3011

SMD S MD Type Silicon NPN Epitaxial 2SC3011 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 High fT : fT=6.5GHz 0.55 Low Noise Figure: NF=2.3dB(Typ.) f=1GHz +0.1 1.3-0.1 High Gain :|S21e|2=12dB(TYP.) 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating 20 7 3 30 10 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Reverse Transfer Capacitance Input Capacitance Transition Frequency Insertion Gain Noise Figure Symbol ICBO IEBO Testconditons VCB = 10 V, IE = 0 VEB = 1.0 V, IC = 0 7 30 120 0.1 0.87 VCB = 5 V, IE = 0, f = 1 MHz VEB=0,IC=0,f=1MHZ VCE=5V,IC=10mA 2 Min Typ Max 1.0 1.0 V(BR)CEO IC = 0.5 mA, IB = 0 hFE VCE (sat) VBE (sat) Cob Cre Cib fT |S21e| NF VCE = 5 V, IC = 10 mA IC = 10 mA, IB = 1mA +0.1 0.38-0.1 0-0.1 Unit ìA ìA V V V 0.9 pF pF pF GHz dB dB 0.7 0.5 0.8 6.5 12 2.3 VCE=5V,IC=10mA,f=1GHZ VCE=5V,IC=5mA,f=1GHz Marking Marking MA www.kexin.com.cn 1