2SC3074

S MD Type Silicon NPN Epitaxial 2SC3074 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector saturation voltage. High speed switching time. +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25 Tc = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC IB PC Rating 60 50 5 5 1 1.0 20 150 -55 to +150 Unit V V V A A W W 3 .8 0 www.kexin.com.cn 1 SMD Type 2SC3074 Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V(BR)CEO hFE VCE (sat) VBE (sat) fT Cob ton Testconditons VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 1 V, IC = 1 A VCE = 1 V, IC = 3 A IC = 3 A, IB = 0.15 A IC = 3 A, IB = 0.15 A VCE = 4 V, IC = 1 A VCB = 10 V, IE = 0, f = 1 MHz 50 70 30 Min Transistors Typ Max 1 1 Unit ìA ìA V 240 0.2 0.9 120 80 0.1 0.4 1.2 V V MHz pF ìs Storage time tstg 1 ìs Fall time tf 0.1 ìs hFE Classification Marking Rank hFE O 70 140 C3074 Y 120 240 2 www.kexin.com.cn