2SC3076

S MD Type Silicon NPN Epitaxial 2SC3076 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low Collectror Saturation Voltage:VCE(sat)=0.5V(Max.)(IC=1A) Excellent Switching Time :tstg=1.0ìs(Typ.) +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base Current Collector power dissipation Ta=25 TC=25 Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC PC Tj Tstg Rating 50 50 5 2 1 1.0 10 150 -55 to 150 Unit V V V A A A W 3 .8 0 www.kexin.com.cn 1 SMD Type 2SC3076 Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition Frequency Collector output capacitance Switching Time Ture-on Time Symbol ICBO IEBO Testconditons VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 50 70 40 Min Typ Transistors Max 1.0 1.0 Unit ìA ìA V V(BR)CEO IC = 10 mA, IB = 0 hFE VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1.5A VCE (sat) IC = 1A, IB = 0.05A VBE (sat) IC = 1A, IB = 0.05A fT Cob ton VCE=2V,IC=0.5A VCB = 10V, IE = 0, f = 1 MHz 240 0.5 1.2 80 30 0.1 V V MHz pF ìS switching Time Storage Time tstg 1 ìS Switching Fall Time tf 0.1 ìS hFE Classification Marking Rank hFE O 70 140 C3076 Y 120 240 2 www.kexin.com.cn