SMD S MD Type
Silicon NPN Epitaxial 2SC3121
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
High Transition Frequency :fT=1500MHz (Typ.) Exellent Linearity
1
+0.1 0.95-0.1 +0.1 1.9-0.1
+0.1 1.3-0.1
Features
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 15 3 25 50 150 125 -55 to +125 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Transition Frequency Conversion Output Capacitance Collector-Bace Time Constant Symbol ICBO IEBO Testconditons VCB = 15V, IE = 0 VEB = 3V, IC = 0 15 60 1100 150 1500 0.9 7 1.3 12 320 MHz pF ps Min Typ Max 0.1 1.0 Unit ìA ìA V
V(BR)CEO IC=1mA,IB=0 hFE fT Cob Cc.rbb2 VCE = 3 V, IC = 8 mA VCE = 10 V, IC = 8mA VCB=10V,IE=0mA,f=1MHZ VCB=10V,IC=8mA,f=30MHZ
Marking
Marking HC
+0.1 0.38-0.1
0-0.1
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