2SC3122

SMD S MD Type Silicon NPN Epitaxial 2SC3122 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Low Noise :NF=2.0dB(Typ.)(f=200MHZ) Excellent Forward AGC Characteristics 0.55 High Gain: Gpe=24dB(Typ.)(f=200MHz) +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 3 20 10 150 125 -55 to +125 Unit V V V mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SC3122 Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Reverse Transfer Capacitance Transition Frequency Power Gain Noise Figure AGC Voltage Symbol ICBO IEBO Testconditons VCB = 25V, IE = 0 VEB = 2V, IC = 0 30 60 Min Transistors IC Typ Max 100 100 Unit nA nA V V(BR)CEO IC=1mA,IB=0 hFE Cre fT Gpe NF VAGC VCE = 10 V, IC = 2 mA VCB=10V,IE=0,f=1MHz VCE = 10 V, IC = 2mA Vce=12V,VAGC=1.4V,f=200MHz VCC=12V,GR=30dB,f=200MHZ * 150 0.3 300 0.45 pF MHz 28 3.2 5.1 dB dB V 400 20 650 24 2.0 3.6 4.4 *VAGC measured by test circuit shown in Fig.1 when power gain is reduced to 30dB compared that of VAGC at 1.4V Marking Marking HD 2 www.kexin.com.cn