2SC3123

SMD S MD Type Silicon NPN Epitaxial 2SC3123 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Low Reverse Transfer Capacitance : Cre=0.4F(TYP.) 0.55 High Conversion Gain :Gce=23dB(TYP.) +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 20 3 50 25 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Reverse Transfer Capacitance Transition Frequency Conversion Gain Noise Figure Symbol ICBO IEBO Testconditons VCB = 25V, IE = 0 VEB = 3V, IC = 0 20 40 150 0.4 900 20 1400 23 3.8 5.5 300 0.5 pF MHz dB dB Min Typ Max 100 1000 Unit nA nA V V(BR)CEO IC=1mA,IB=0 hFE Cre fT Gce NF VCE = 10 V, IC = 5mA VCB=10V,IE=0,f=1MHz VCE = 10 V, IC = 5mA VCC=12V,fL=260MHz,f=200MHZ Marking Marking HE +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1