2SC3124

SMD S MD Type Silicon NPN Epitaxial 2SC3124 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 15 3 50 25 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Transition Frequency Collector Output Capacitance Collector-BaseTime Constant Symbol ICBO IEBO Testconditons VCB = 15V, IE = 0 VEB = 3V, IC = 0 15 40 650 100 1100 0.9 7 1.3 12 200 MHz pF ps Min Typ Max 0.1 1.0 Unit ìA ìA V V(BR)CEO IC=1mA,IB=0 hFE fT Cob Cc.rbb2 VCE = 3 V, IC = 8mA VCE = 10 V, IC = 8mA VCC=10V,IE=0,f=1MHz VCB=10V,IC=8mA,f=30MHz Marking Marking HF +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1