2SC3125

SMD S MD Type Silicon NPN Epitaxial Planar Type 2SC3125 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 Features Good Lineality of fT +0.1 1.3-0.1 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector Power Dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 25 4 50 25 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Saturation Voltage Collector-Emitter Saturation Voltage Baser-Emitter Transition Frequency Collector Output Capacitance Collector-BaseTime Constant Symbol ICBO IEBO Testconditons VCB = 30V, IE = 0 VEB = 3V, IC = 0 25 20 70 200 0.2 1.5 VCE = 10 V, IC = 10mA VCC=10V,IE=0,f=1MHz VCB=10V,IC=1mA,f=30MHz 250 600 1.1 1.6 25 V V MHz pF ps Min Typ Max 0.1 1.0 Unit ìA ìA V V(BR)CEO IC=10mA,IB=0 hFE VCE(sat) VBE(sat) fT Cob Cc.rbb' VCE = 10 V, IC = 10mA IC=15mA,IB=1.5mA Marking Marking HH +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1