2SC3134

SMD S MD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SC3134 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 Wide ASO and high durability against breakdown. 0.55 High VEBO. +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Icp PC Tj Tstg Rating 60 50 15 150 300 200 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol ICBO IEBO hFE fT Cob Testconditons VCB=40V, IE=0 VEB=10V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=1mA VCB=6V, f=1MHz 90 100 2.2 0.5 60 50 15 Min Typ Max 0.1 0.1 560 MHz pF V V V V Unit ìA ìA VCE(sat) IC=50mA, IB=5mA V(BR)CBO IC=10ìA, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO IE=10ìA, IC=0 hFE Classification Marking Rank hFE 4 90 180 5 135 270 H 6 200 400 7 300 600 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1