2SC3143

S MD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC3143 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 High breakdown voltage. Small output capacitance. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 180 160 5 80 150 200 125 -55 to +125 Unit V V V mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SC3143 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Base-emitter voltage Collector-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol IcBO IEBO hFE fT Cob VBE Testconditons VCB = 120V , IE = 0 VEB = 4V , IC = 0 VCE = 5V , IC = 10 mA VCE = 10V , IC = 10 mA VCB = 10V , f = 1MHz VCE = 5V , IC = 10 mA Transistors Min Typ Max 0.1 0.1 Unit ìA ìA 60 150 2.0 270 MHz 2.5 1.5 0.7 pF V V V V V 0.18 ìs VCE(sat) IC = 30mA , IB = 3mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ton 180 160 5 Storage time tstg 1.0 ìs Fall time tf 0.2 ìs hFE Classification Marking Rank hFE 3 60 120 K 4 90 180 5 135 270 2 www.kexin.com.cn