2SC3265

SMD S MD Type Silicon NPN Epitaxial 2SC3265 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features High DC current gain: hFE (1) = 100320. Low saturation voltage: VCE (sat) = 0.4 V (max) (IC = 500 mA, IB = 20 mA). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 25 5 800 160 200 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol ICBO IEBO Testconditons VCB = 30 V, IE = 0 VEB = 50 V, IC = 0 25 5 100 320 0.4 0.5 120 13 0.8 V V MHz pF Min Typ Max 0.1 0.1 Unit ìA ìA V V V(BR) CEO IC = 10 mA, IB = 0 V(BR) EBO IE = 0.1 mA, IC = 0 hFE VCE = 1 V, IC = 100 mA VCE (sat) IC = 500 mA, IB = 20 mA VBE fT Cob VCE = 1 V, IC = 10 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz hFE Classification Marking hFE EO 100 200 EY 160 320 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1