2SC3295

SMD S MD Type Silicon NPN Epitaxial 2SC3295 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 High hFE: hFE = 600 3600. High voltage: VCEO = 50 V. High collector current: IC = 150 mA (max). Small package. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 50 50 5 150 30 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol ICBO IEBO hFE Testconditons VCB = 50 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2 mA 600 0.12 100 250 3.5 0.5 0.3 Min Typ Max 0.1 0.1 3600 0.25 V MHz pF dB dB Unit ìA ìA VCE (sat) IC = 100 mA, IB = 10 mA fT Cob NF(1) NF(2) VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, f = 100 Hz, Rg = 10kÙ VCE = 6 V, IC = 0.1 mA, f = 100 Hz, Rg = 10kÙ hFE Classification Marking hFE 600 PA 1800 PB 1200 3600 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1