2SC3324

S MD Type Silicon NPN Epitaxial 2SC3324 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 High hFE.hFE=200 to 700 Low noise. Small package. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High voltageVCEO=120V 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 120 120 5 100 20 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol ICBO IEBO hFE Testconditons VCB = 120 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2 mA 200 Min Typ Max 0.1 0.1 700 0.3 100 4 0.5 0.2 6 3 V MHz pF dB dB Unit ìA ìA VCE (sat) IC = 10 mA, IB = 1 mA fT Cob NF VCE = 6 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCB=6 V, IC=0.1 mA, f=100 Hz,Rg=10 kÙ VCB=6 V, IC=0.1 mA, f=1 kHz,Rg=10 kÙ hFE Classification Marking Rank hFE CBG GR 200 400 CBL BL 350 700 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1