2SC3356-R25

Transistors SMD Type NPN Transistors 2SC3356 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz 1 High power gain. 0.55 Low noise and high gain. +0.1 1.3 -0.1 +0.1 2.4 -0.1 0.4 3 Features 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit C ol le cto r to b as e v ol ta ge Parameter VCBO 20 V Collector to emitter v oltage VCEO 12 V Emitter to base voltage VEBO 3.0 V Collector current (DC) IC 100 mA Total power dissipation Ptot 200 mW Tj 150 Tstg -65 to +150 Junction temperature Storage temperature range Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 20 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB= 0 12 3 Typ Max V Emitter - base breakdown voltage VEBO IE= 100 uA， IC= 0 Collector-base cut-off current ICBO VCB= 10 V , IE= 0 1 Emitter cut-off current IEBO VEB= 3V , IC=0 1 Collector-emitter saturation voltage * VCE(sat) IC=50 mA, IB=5mA 0.4 Base - emitter saturation voltage * VBE(sat) IC=50 mA, IB=5mA 1.2 DC current gain * VCE= 10V, IC= 20mA hFE 50 VCE = 10 V, IC = 20 mA, f= 1GHz 11.5 NF VCE = 10 V, IC = 7 mA, f= 1GHz 1.1 2 Reverse transfer capacitance Cre VCB= 10V, IE= 0,f=1MHz 0.55 1 |S21e | Transition frequency VCE= 10V, IC= 20mA fT *. Pulse measurement: PW 350 s, Duty Cycle uA V 400 Noise figure Insertion power gain 2 Unit 7 dB pF GHz 2%. hFE Classification Type 2SC3356-R23 2SC3356-R24 2SC3356-R25 2SC3356-R26 Range 50-100 80-160 125-250 250-400 Marking R23 R24 R25 R26 www.kexin.com.cn 1 Transistors SMD Type 2SC3356 ■ Typical Characterisitics 200 100 50 0 1 0.5 0.3 0 150 15 5 10 |S21e|2-Insertion Gain-dB 20 20 30 10 5 VCE = 10 V f = 1.0 GHz 1 5 10 0 0.5 50 IC-Collector Current-mA 3.0 2.0 1.0 0.5 0.3 VCE = 10 V 0.5 1.0 5.0 10 IC-Collector Current-mA www.kexin.com.cn 5 10 50 70 INSERTION GAIN, MAXIMUM GAIN vs. FREQUENCY Gmax-Maximum Gain-dB |S21e|2-Insertion Gain-dB 5.0 0 1 IC-Collector Current-mA GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10 fT-Gain Bandwidth Product-MHz 2 INSERTION GAIN vs. COLLECTOR CURRENT VCE = 10 V 10 0.5 2 1 DC CURRENT GAIN vs. COLLECTOR CURRENT 50 0.1 0.5 VCB-Collector to Base Voltage-V 100 0.2 f = 1.0 MHz TA-Ambient Temperature-°C 200 hFE-DC Current Gain 100 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 2 Free Air Cre-Feed-back Capacitance-pF PT-Total Power Dissipation-mW TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 30 Gmax 20 |S21e|2 10 0 VCE = 10 V IC = 20 mA 0.1 0.2 0.4 0.6 0.81.0 f-Frequency-GHz 2 Transistors SMD Type 2SC3356 ■ Typical Characterisitics NOISE FIGURE vs. COLLECTOR CURRENT 15 |S21e|2-Insertion Gain-dB 6 5 4 3 2 12 6 0 0.5 1 5 10 3 2 3 1 NF 1 0 50 70 2 0 IC-Collector Current-mA 0.15 0.35 70 1.4 1.2 1.0 1.6 0.7 0.6 10 T EN 0. 18 32 0. 50 3.0 0.6 O C 0.8 1.0 6.0 0.6 10 0.4 0.1 50 10 1.0 5.0 1.0 ( 0.8 0.6 E IV AT 3.0 2.0 1.8 4 0.3 6 0.1 1.6 1.4 0 0.35 0.15 −70 1.2 3 −6 0.36 0.14 −80 1.0 0.3 7 0.9 0.1 0.7 32 NE G 0.2 −90 0.37 0.13 0.38 0.12 0.8 0. 0.6 0. 0.4 0.5 0. 0. 31 19 18 0 −5 E NC TA X AC −J––O– RE –Z ) 4.0 0 0.39 0.11 −100 0.40 0.10 −11 0 0. 4 0. 3 07 30 −1 0.4 1 0.0 0.4 9 0.0 2 20 8 −1 S21e-FREQUENCY 0.2 8 0.2 2 −20 0.2 GHz IC = 5 mA −4 0.4 0.27 0.23 IC = 5 mA 0.2 GHz 0.8 −10 S22e 0.6 IC = 20 mA 0.26 0.24 0.4 0.2 9 0.2 1 0.3 −3 0.2 0 0 0 0.3 20 10 5.0 4.0 3.0 1.8 2.0 1.6 1.4 0.7 0.8 0.6 0.5 0.4 0.3 1.2 0.2 GHz IC = 20 mA 50 0.9 1.0 ) 20 ( 0 REACTANCE COMPONENT R –––– 0.2 ZO 0.25 0.25 0.2 20 0.2 0.3 0.2 0.8 S11e 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 4.0 1.0 2.0 GHz 1 0.2 9 0.2 30 ( –Z–+–J–XTANCE CO ) MPO 0.4 40 N 0.1 0.3 7 3 600 1.8 0.2 0.1 6 0.3 4 2.0 0 13 0.2 S12e-FREQUENCY VCE = 10 V IC = 20 mA CONDITION 90° 90° 120° VCE = 10 V IC = 20 mA 2.0 GHz 60° 120° 60° 0.2 GHz 150° 8 0 0.2 0 0.3 WAVELE NGTH S TO 0. 43 0.14 0.36 80 90 0.1 CONDITION 6 19 0. 31 0. 0 0.01 0.49 0.02 WARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 RD LOAD 0.4 0.0TOR 3 S TOWAE OF REFLECTION COEFFCIENT IN 6 7 DEG 0.0 4 GTH0 ANGL 0.4 REE N E 0.4 6 0 4 EL −1 S 6 0.0 0.0WAV 5 4 15 0. 5 0.4 5 50 0 1 0 − 5 0. 0. 4 0 4 POS T 0.1 14 0.4 6 0. 06 40 ITIV NEN O . 0 E 4 P RE M 0 −1 A CO 0. 0.13 0.37 0.12 0.38 0.11 0.39 100 0.5 07 8 0.0 2 0.4 20 1 0.10 0.40 110 0.9 9 0.0 1 0.4 VCE = 10 V 200 MHz Step 0.8 S11e, S22e-FREQUENCY CONDITION 4 VCE-Collector to Emitter Voltage-V 0.4 NF-Noise Figure-dB 18 VCE = 10 V f = 1.0 GHz NF-Noise Figure-dB 7 NOISE FIGURE, FORWARD INSERTION GAIN vs. COLLECTOR TO EMITTER VOLTAGE 5 f = 1.0 GHz IC = 20 mA 4 2 |S21e| S12e 30° S21e 150° 30° 0.2 GHz 180° 2.0 GHz 5 10 15 −150° 20 0° 180° −30° −60° −120° −90° 0.05 0.1 0.15 −150° 0° 0.2 0.25 −30° −60° −120° −90° www.kexin.com.cn 3