2SC3356

S MD Type NPN Silicon Epitaxial Transistor 2SC3356 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz +0.1 1.3-0.1 Low noise and high gain. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Rating 20 12 3.0 100 200 150 -65 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Insertion power gain Noise figure Reverse transfer capacitance Transition frequency *. Pulse measurement: PW 350 s, Duty Cycle Symbol ICBO IEBO hFE S21e NF Cre fT 2%. 2 Testconditons VCB = 10 V, IE = 0 mA VEB = 1.0 V, IC = 0 mA VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 7 mA, f = 1 GHz VCB = 10 V, IE = 0 mA, f = 1 MHz VCE = 10 V, IC = 20 mA Min Typ +0.1 0.38-0.1 0-0.1 Max 1.0 1.0 Unit A A 50 120 11.5 1.1 0.55 7 250 dB 2.0 1.0 dB pF GHz hFE Classification Marking Rank hFE 50 R23 Q 100 80 R24 R 160 125 R25 S 250 www.kexin.com.cn 1