2SC3361

SMD S MD Type Transistors IC NPN Epitaxial Planar Silicon Transistors 2SC3361 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 Fast switching speed. High breakdown voltage. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 60 50 5 150 400 40 150 125 -55 to +125 Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SC3361 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Delay time Rise time Storage time Fall time Symbol IcBO IEBO hFE fT Cob Testconditons VCB = 40V , IE = 0 VEB = 4V , IC = 0 VCE = 6V , IC = 1mA VCE = 6V , IC = 1mA VCB = 6V , f = 1MHz Transistors IC Min Typ Max 0.1 0.1 Unit ìA ìA 90 100 2.7 0.1 0.75 60 50 5 40 80 230 160 400 MHz pF 0.4 1.1 V V V V V ns ns ns ns VCE(sat) IC = 10mA , IB =1mA VBE(sat) IC = 10mA , IB =1mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 td tr tstg tf hFE Classification Marking hFE 90 S4 180 S5 135 270 S6 200 400 2 www.kexin.com.cn