2SC3392

SMD S MD Type Transistors IC NPN Epitaxial Planar Silicon Transistors 2SC3392 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 Adoption of FBET process. High breakdown voltage : VCEO=50V. Large current capacitiy and high fT. Ultrasmall-sized package permitting sets to be smallsized, slim. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 5 500 800 200 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Turn-on time Storage time Fall time Symbol IcBO IEBO hFE fT Cob Testconditons VCB = 40V , IE = 0 VEB = 4V , IC = 0 VCE = 5V , IC = 10mA VCE = 10V , IC = 50mA VCB = 10V , f = 1MHz 100 300 3.7 0.1 0.8 60 50 5 70 VCC = 20V, IC = 10IB1 = -10IB2 = 100mA 400 70 0.3 1.2 Min Typ Max 0.1 0.1 560 MHz pF V V V V V ns ns ns Unit ìA ìA VCE(sat) IC = 100mA , IB =10mA VBE(sat) IC = 100mA , IB =10mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 100ìA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ton tstg tf hFE Classification Marking Rank hFE 100 4 200 5 140 280 AY 6 200 400 7 280 560 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1