2SC3429

SMD S MD Type Silicon NPN Epitaxial Planar Type 2SC3429 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features Low Noise Figure NF=1.5dB,|S21e|2=16dB(f=500MHz) NF=1.5dB,|S21e|2=10.5dB(f=1GHz) +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 17 12 3 70 30 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collecter Output Capacitance Reverse Transfer Capacitance Transition Frequency Insertion Gain Symbol ICBO IEBO hFE Cob Cre fT VCE=10V.IC=20mA Testconditons VCB = 10 V, IE = 0 VEB = 1V, IC = 0 VCE = 10 V, IC = 20mA VCB=10V,IE=0,f=1MHz 25 0.85 0.57 5 16 10.5 1.5 1.7 pF pF GHz dB dB dB dB Min Typ Max 1 1 Unit nA nA |S21e|2(1) VCE=10V.IC=20mA,f=500MHz |S21e| (2) VCE=10V.IC=20mA,f=1GHz 2 Noise Figue NF(1) NF(2) VCE=10V.IC=5mA,f=500MHz VCE=10V.IC=5mA,f=1GHz Marking Marking ME +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1