SMD S MD Type
Silicon NPN Epitaxial 2SC3437
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
High transition frequency: fT = 400 MHz (typ).
+0.1 2.4-0.1
Low saturation voltage: VCE (sat) = 0.3 V (max). High speed switching time: tstg = 15 ns (typ).
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
Features
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 15 5 200 40 150 125 -55 to +125 Unit V V V mA mA mW
+0.1 0.38-0.1
0-0.1
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1
SMD Type
2SC3437
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time ton Storage time tstg Fall time tf 30 15 Symbol ICBO IEBO hFE Testconditons VCB = 40 V, IE = 0 VEB = 5 V, IC = 0 VCE = 1 V, IC = 10 mA 40 Min Typ
Transistors IC
Max 0.1 0.1 240 0.3 1.0
Unit ìA ìA
VCE (sat) IC = 20 mA, IB = 1 mA VBE (sat) IC = 20 mA, IB = 1 mA fT Cob VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz 200 400 4 70
V V MHz
6
pF ns
ns
ns
hFE Classification
Marking Rank hFE 40 R 80 70 CH O 140 Y 120 240
2
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