2SC3439

S MD Type Small Signal Transistor 2SC3439 Transistors Features High hFE=400 to 1800. High collector current (Icm=3A,Ic=1.5A) High collector dissipation Pc=500mW Low VCE(sat) VCE(sat)=0.2V typ(@Ic=1a,IB=20mA) Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Emitter-base voltage Collector-emitter voltage Peak collector current Collector current Collector dissipation (Ta=25 ) Jumction temperature Storage temperature Symbol VCBO VEBO VCEO ICM IC PC Tj Tstg Rating 30 6 25 3 1.5 500 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Colllector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol Testconditons Min 30 6 25 0.1 0.1 400 0.25 130 17 1800 0.5 V MHz pF Typ Max Unit V V V ìA ìA V(BR)CBO IC=10ìA,IE=0 V(BR)EBO IE=10ìA,IC=0 V(BR)CEO IC=1mA,RBE= ICBO IEBO hFE VCB=20V,IE=0 VEB=2V,IC=0 VCE=6V,IC=500mA VCE(sat) IC=1A,IB=20mA fT Cob VCE=10V,IE=-10mA VCB=10V,IE=0,f=1MHz hFE Classification Marking hFE HG 400 800 HH 600 1200 HJ 900 1800 www.kexin.com.cn 1