2SC3444

S MD Type Small Signal Transistor 2SC3444 Transistors Features High voltage VCEO=60V. High collector current (Ic=1A). High collector dissipation Pc=500mW. Low VCE(sat): VCE(sat)=0.11V typ(@Ic=500mA,IB=25mA). Small package for mounting. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Emitter-base voltage Collector-emitter voltage Peak collector current Collector current Collector dissipation (Ta=25 ) Jumction temperature Storage temperature Symbol VCBO VEBO VCEO ICM IC PC Tj Tstg Rating 60 6 60 2 1 500 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Colllector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol Testconditons Min 60 6 60 0.2 0.2 55 0.11 80 14 300 0.3 V MHz pF Typ Max Unit V V V ìA ìA V(BR)CBO IC=10ìA,IE=0 V(BR)EBO IE=10ìA,IC=0 V(BR)CEO IC=2mA,RBE= ICBO IEBO hFE VCB=50V,IE=0 VEB=4V,IC=0 VCE=4V,IC=100mA VCE(sat) IC=500mA,IB=25mA fT Cob VCE=2V,IE=-10mA VCB=10V,IE=0,f=1MHz hFE Classification Marking hFE DC 55 110 DD 90 180 DE 150 300 www.kexin.com.cn 1