2SC3513

SMD S MD Type Silicon NPN Epitaxial 2SC3513 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 Features +0.1 1.3-0.1 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 15 11 2 500 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector cutoff current Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO ICEO IEBO ICBO hFE Cob fT PG NF Testconditons IC= 10 mA, IE = 0 VCE = 10 V, RBE = VEB = 1 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA,f = 900 MHz VCE = 5 V, IC = 5 mA,f = 900 MHz 50 120 1.0 6.0 10 1.6 Min 15 1 1 1 250 1.5 pF GHz dB dB Typ Max Unit V ìA ìA ìA Marking Marking IS- +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1