S MD Type
High Voltage Control Applications 2SC3515
Transistors
Features
High Voltage: VCBO = 300V , VCEO = 300V Low Saturation Voltage: VCE(sat) = 0.5V (max) Small Collector Output Capacitance: Cob = 3pF(typ.) PC = 1 to 2W (mounted on ceramic substrate) Small Flat Package Complementary to 2SA1384
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Jumction temperature Storage temperature Range * mounted on a ceramic substrate (250 mm x 0.8 t)
2
Symbol VCBO VCEO VEBO IC IB PC PC * Tj Tstg
Rating 300 300 6 100 20 500 1000 150 -55 to +150
Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector Cut-off Current Emitter Cut-off Current Collector-base Breakdown Voltage Collector-emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-emitter Saturation Voltage Transition Frequency Collector Output Capacitance Symbol ICBO IEBO Testconditons VCB = 300V , IE = 0 VEB = 6V , IC = 0 300 300 30 150 0.5 1 50 80 3 4 V V MHz pF Min Typ Max 0.1 0.1 Unit ìA ìA V V
V(BR)CBO IC = 0.1mA , IE = 0 V(BR)CEO IC = 1mA , IB = 0 hFE VCE = 10V , IC = 20mA
VCE(sat) IC = 20mA , IB = 2mA VBE(sat) IC = 20mA , IB = 2mA fT Cob VCE = 10V , IC = 20mA VCB = 20V , IE = 0 , f = 1MHz
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1
SMD Type
2SC3515
hFE Classification
Marking Rank hFE 30 R 90 50 I O 150
Transistors
Electrical Characteristics Curves
2
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SMD Type
2SC3515
Transistors
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3
S MD Type
2SC3515
Transistors
4
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