2SC3518-Z

S MD Type NPN Silicon Epitaxia 2SC3518-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 High DC current gain. 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) *1 Total power dissipation *2 Junction temperature Storage temperature *1 PW 10 ms, duty cycle 50% Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 60 60 7 5 7 2 150 -55 to +150 Unit V V V A A W *2 When mounted on ceramic substrate of 7.5cm2X0.7mm Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Turn-on time Storage time Turn-off time *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 50V, IE=0 VEB = 7V, IC=0 VCE = 1V , IC = 2A VCE = 1V , IC = 5A VCE(sat) IC = 2A , IB = 0.2A VBE(sat) IC = 2A , IB = 0.2A fT ton tstg toff VCE = 10V , IE = 500mA VCC = 10V, RL=5Ù IC = 2A , IB1 = -IB2 = 0.2A 120 0.07 0.8 0.12 1 2.5 1 100 50 0.3 1.2 V V MHz ìs ìs ìs Min Typ Max 10 10 400 Unit ìA ìA V hFE Classification Marking hFE M 100 200 L 150 300 200 K 400 3 .8 0 Fast switching speed. www.kexin.com.cn 1