SMD S MD Type
Silicon NPN Epitaxial Planar Type 2SC3547A
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
+0.1 2.4-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
Features
Transition frequency is high and dependent on current excellently.
+0.1 1.3-0.1
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IB IC PC Tj Tstg Rating 20 12 3 15 30 150 125 -55 to +125 Unit V V V mA mA mW
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Transition frequency Output capacitance Collector-base time constant Symbol ICBO IEBO Testconditons VCB =10 V, IE = 0 VEB = 1 V, IC = 0 12 35 3 4 1.05 4.5 1.35 10 130 GHz pF ps Min Typ Max 0.1 1.0 Unit ìA ìA V
V(BR) CEO IC = 1 mA, IB = 0 hFE fT Cob VCE = 10 V, IC = 5 mA VCE = 10 V, IC= 10 mA VCB = 10 V, IE =0, f =1 MHz
Cc rbb’ VCB = 10 V, IC = 5 mA, f = 30 MHz
Marking
Marking HI
+0.1 0.38-0.1
0-0.1
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