2SC3583

SMD S MD Type NPN Silicon Epitaxial Transistor 2SC3583 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features NF 1.2 dB TYP. @f = 1.0 GHz Ga 13 dB TYP. @f = 1.0 GHz +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Rating 20 10 1.5 65 200 150 -65 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain *1 Gain bandwidth product Feed-Back Capacitance Insertion Power Gain Maximum Available Gain Noise Figure *1.Pulse Measurement PW Symbol ICBO IEBO hFE fT Cre *2 | MAG NF 350ìs, Duty Cycle 2 % Testconditons VCB = 10 V, IE = 0 VEB = 1 V, IE = 0 VCE = 8 V, IC = 20 mA VCE = 8 V, IC = 20 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 8 V, IC = 20 mA, f = 1.0 GHz VCE = 8 V, IC = 20 mA, f = 1.0 GHz VCE = 8 V, IE = 7 mA, f = 1.0 GHz 11 50 100 9 0.35 13 15 1.2 2.5 0.9 Min Typ Max 1.0 1.0 250 GHz pF dB dB dB Unit ìA ìA *2.The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge. hFE Classification Marking Rank hFE R33 R33/Q 50 100 R34 R34/R 80 160 R35 R35/S 125 250 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1