2SC3585

SMD S MD Type NPN Silicon Epitaxial Transistor 2SC3585 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features NF 1.8 dB TYP. @f = 2.0 GHz Ga 9 dB TYP. @f = 2.0 GHz +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 20 10 1.5 35 200 150 -65 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain Bandwidth Product Feed-Back Capacitance Insertion Power Gain Maximum Available Gain Noise Figure *1. Pulse Measurement PW 350ìs, Duty Cycle Symbol ICBO IEBO hFE*1 fT Cre *2 |S21e| 2 Testconditons VCB = 10 V, IE = 0 VEB = 1V, IC = 0 VCE = 6 V, IC =10 mA VCE = 6 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 6 V, IC = 10 mA, f = 2.0 GHz VCE = 6 V, IC = 10 mA, f = 2.0 GHz VCE = 6 V, IC = 5 mA, f = 2.0 GHz Min Typ +0.1 0.38-0.1 0-0.1 Max 1.0 1.0 Unit ìA ìA 50 100 10 0.3 250 GHz 0.8 pF dB dB 3.0 dB 6.0 8.0 10 1.8 MAG NF 2% *2.The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge. hFE Classification Marking Rank hFE R43 R43/Q 50 100 R44 R44/R 80 160 R45 R45/S 125 250 www.kexin.com.cn 1