2SC3588-Z

S MD Type Transistors NPN Silicon Triple Diffused Transistor 2SC3588-Z TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features High voltage VCEO=400V +0.2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current *1 Collector current Total power dissipation Junction temperature Storage temperature *1 pw 10ms,Duty cycle 50% *2 when mounted on ceramic substrate of 7.5cm2X0.7mm TC = 25 *2 Symbol VCBO VCES VEBO ICP IC PT Tj Tstg Rating 500 400 7 1 0.5 2 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain * Collector Saturation Voltage * Base Saturation Voltage * Turn-on Time Storage Time Fall Time * Pulsed: PW 350ìA,Duty Cycle 2% Symbol ICBO IEBO hFE VCE(sat) VBE(sat) ton tstg tr Testconditons VCB=400V,IE=0 VEB=5.0V,IC=0 VCE=5V,IC=50mA VCE=5V,IC=300mA IC=300mA,IB=60mA IC=300mA,IB=60mA IC=0.3A,RL=500Ù,VCC=150V, PW =50ìs,IB1=-IB2=0.06A Duty Cycle 2% 20 10 42 20 0.2 0.85 0.12 2.0 0.35 0.5 1.0 1.0 2.5 1.0 ìs V V Min Typ Max 10 10 80 Unit ìA ìA hFE Classification Marking hFE M 20 to 40 L 30 to 60 K 40 to 80 3 .8 0 www.kexin.com.cn 1