2SC3606

SMD S MD Type Silicon NPN Epitaxial Planar Type 2SC3606 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 12 3 80 40 150 125 -55 to 125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector output capacitance Reverse transfer capacitance Transition frequency Insertion gain Symbol ICBO IEBO hFE Cob Cre fT 2 Testconditons VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 10 V, IC =20mA VCB=10V,IE=0,f=1MHz, VCE =10 V, IC =20 mA Min Typ Max 1 1 +0.1 0.38-0.1 0-0.1 Unit ìA ìA V pF 30 10 0.7 5 7 16.5 7.5 11 1 1.1 250 1.15 pF GHz dB dB dB |S21e| (1) VCE =10 V, IC =20 mA, f =500 MHz |S21e| 2 (2) VCE = 10 V, IC = 20 mA, f =1 GHz NF (1) NF (2) VCE =10 V, IC = 5 mA, f = 500 MHz VCE = 10 V, IC = 5 mA, f = 1 GHz Noise figure 2 dB Marking Marking MH www.kexin.com.cn 1