2SC3617

S MD Type NPN Silicon Epitaxia 2SC3617 Transistors Features World standard miniature package. High hFE hFE=800 to 1600. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse)* Total power dissipation Junction temperature Storage temperature * PW 10ms,duty cycle 50%. Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 50 50 15 300 500 2.0 150 -55 to +150 Unit V V V mA mA W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 50V, IE=0 VEB = 10V, IC=0 VCE = 5.0V , IC = 100mA VCE = 5.0V , IC = 300mA VCE(sat) IC = 100mA , IB = 1.0mA VBE(sat) IC = 100mA , IB = 1.0mA fT Cob VCE = 5.0V , IE = -50mA VCB = 10V , IE = 0, f = 1.0MHz 150 800 640 0.12 0.7 220 8.0 0.13 1.2 V V MHz pF Min Typ Max 100 100 3200 Unit nA nA hFE Classification Marking hFE TM 800 1600 TL 1200 2400 TK 2000 3200 www.kexin.com.cn 1