2SC3618

S MD Type NPN Silicon Epitaxia 2SC3618 Transistors Features World standard miniature package. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (Pulse)* Total power dissipation Junction temperature Storage temperature * PW 10ms,duty cycle 50%. Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg Rating 25 25 15 0.7 1.0 2.0 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 25V, IE=0 VEB = 10V, IC=0 VCE = 2.0V , IC = 300mA 800 0.16 0.75 150 250 10 Min Typ Max 100 100 3200 0.3 1.2 V V MHz pF Unit nA nA VCE(sat) IC = 300mA , IB = 3.0mA VBE(sat) IC = 300mA , IB = 3.0mA fT Cob VCE = 5.0V , IE = -300mA VCB = 10V , IE = 0, f = 1.0MHz hFE Classification Marking hFE UM 800 1600 UL 1200 2400 UK 2000 3200 www.kexin.com.cn 1