2SC3624

SMD S MD Type NPN Silicon Epitaxial Transistor 2SC3624 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 Low VCE(sat): (VCE(sat) = 0.07 V TYP). 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High DC current Gain: hFE = 1000 to 3200. 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating 60 50 12 150 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Base-emitter voltage * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE VBE Testconditons VCB = 50V, IE=0 VEB = 10V, IC=0 VCE = 5V , IC = 1mA VCE = 5V , IC = 1mA 1000 1800 0.56 0.07 0.8 250 3 0.13 0.72 1.22 0.3 1.2 Min Typ Max 100 100 3200 V V V MHz pF ns ns ns Unit nA nA VCE(sat) IC = 50mA , IB = 5mA VBE(sat) IC = 50mA , IB = 5mA fT Cob ton tstg toff VCE = 5V , IE = -10mA VCB = 5V , IE = 0 , f = 1.0MHz VCC = 10V , VBE(off) = -2.7V IC = 50mA , IB1 = -IB2 = 1mA hFE Classification Marking hFE L17 1000 2000 L18 1600 3200 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1