2SC3645

S MD Type High-Voltage Switching Applications 2SC3645 Transistors Features Adoption of FBET Process High Breakdown Voltage (VCEO = 160V) Excellent Linearlity of hFE and Small Cob Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm x 0.8 mm) 2 Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating 180 160 5 140 200 500 1.3 150 -55 to +150 Unit V V V mA mA mW W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Gain-Bandwidth Product Collector Output Capacitance Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE Testconditons VCB = 80V , IE = 0 VEB = 4V , IC = 0 VCE = 5V , IC = 10mA 100 0.14 150 4 0.1 See Test Circuit. 1.5 0.1 ìs Min Typ Max 100 100 400 0.4 V MHz pF Unit nA nA VCE(sat) IC = 50mA , IB = 5mA fT Cob ton tstg tf VCE = 10V , IC = 10mA VCB = 10V , IE = 0 , f = 1MHz www.kexin.com.cn 1 SMD Type 2SC3645 Test Circuit Transistors hFE Classification Marking Rank hFE 100 R 200 140 CA S 280 200 T 400 Electrical Characteristics Curves 2 www.kexin.com.cn SMD Type 2SC3645 Transistors www.kexin.com.cn 3