2SC3650

S MD Type Transistors NPN Epitaxial Planar Silicon Transistor 2SC3650 Features High DC current gain (hFE=800 to 3200). Low collector-to-emitter saturation voltage (VCE(sat) 0.5V). Large current capacity (IC=1.2V). Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Icp PC Tj Tstg Rating 30 25 15 1.2 2 500 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol ICBO IEBO hFE fT Cob Testconditons VCB=20V, IE=0 VEB=10V, IC=0 VCE=5V, IC=500mA VCE=10V, IC=50mA VCB=10V, f=1MHz 800 1500 220 17 0.12 0.85 30 25 15 0.5 1.2 Min Typ Max 0.1 0.1 3200 MHz pF V V V V V Unit ìA ìA VCE(sat) IC=500mA, IB=10mA VBE(sat) IC=500mA, IB=10mA V(BR)CBO IC=10ìA, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO IE=10ìA, IC=0 Marking Marking CF www.kexin.com.cn 1