2SC3707

SMD S MD Type Silicon NPN Epitaxial Planar type 2SC3707 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Possible with the small current and low voltage High transition frequency fT Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 10 7 2 10 50 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Transition frequency Collector output capacitance Forward transfer gain Maximum unilateral power gain Noise figure Symbol ICBO IEBO hFE fT Cob |S21e| GUM NF 2 Testconditons VCB = 10 V, IE = 0 VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCB = 1 V, IE = 0, f = 1 MHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz VCE = 1 V, IC = 1 mA, f = 0.8 GHz Min Typ +0.1 0.38-0.1 0-0.1 Max 1 1 Unit ìA ìA 50 4 0.4 6.0 15 3.5 150 GHz pF dB dB dB Marking Marking 2X www.kexin.com.cn 1