SMD S MD Type
Silicon NPN Epitaxial Planar 2SC3930
Features
Optimum for RF amplification of FM/AM radios. High transition frequency fT.
Transistors IC
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 20 5 30 150 150 -55 to +150 Unit V V V mA mW
Electrical Characteristics Ta = 25
Parameter Collector-base cutoff current Forward current transfer ratio Transition frequency Noise figure Reverse transfer impedance Reverse transfer capacitance Symbol ICBO hFE fT Nf Zrb Cre Testconditons VCB = 10 V, IE = 0 VCB = 10 V, IE = -1 mA VCB = 10 V, IE = -1 mA, f = 200 MHz VCB = 10 V, IE = -1 mA, f = 5 MHz VCB = 10 V, IE = -1 mA, f = 2 MHz VCB = 10 V, IE = -1 mA, f = 10.7 MHz 70 150 250 2.8 22 0.9 4.0 50 1.5 Min Typ Max 0.1 220 MHz dB Ù pF Unit ìA
hFE Classification
Marking hFE VB 70 140 VC 110 220
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