2SC4080

S MD Type Transistors NPN Epitaxial Planar Silicon Transistors 2SC4080 Features High Ft High breakdown voltage Small reverse transfer capacitance excellent high-frequency characteristic Adoption of FBET prccess Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current Collector Current (pulse) Collector Dissipation Junotion Temperature storage Temperature *Mounted on ceramic board (250mm X0.8mm) 2 Symbol VCBO VCEO VEBO IC ICP PC TJ Tstg Rating 200 200 4 100 200 500 1.3 150 -55 to 150 Unit V V V mA mA mA W www.kexin.com.cn 1 SMD Type 2SC4080 Electrical Characteristics Ta = 25 Parameter collector cutoff Current Emitter cutoff current DC Current Gain Gain-Bandwidth product Output Capacitance Reverse Transfer Collector to Emitter Saturation Voltage Base to Emitter Stauration Voltage Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Symbol ICBO IEBO hFE fT cob cre VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Testconditons VCB=150V,IE=0 VEB=2V,IC=0 VCE=10V,IC=10mA VCE=10V,IC=100mA VCE=30V,IC=30mA VCB=30V,f=1MHz VCB=30V,f=1MHz IC=20mA,IB=2mA IC=20mA,IB=2mA IC=10ìA,IE=0 IC=1mA,IB=0 IE=100ìA,IC=0 40 20 Transistors Min Typ Max 0.1 1.0 320 Unit ìA ìA 400 1.8 1.4 1 1 200 200 4 MHz pF V V V V V hFE Classification Marking Rank Type C 40 to 80 D 60 to 120 CI E 100 to200 F 160 to 320 2 www.kexin.com.cn