2SC4102

S MD Type High-voltage Amplifier Transistor 2SC4102 Transistors Features High breakdown voltage.(VCEO = 120V) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 120 120 5 50 0.2 150 -55 to +150 Unit V V V mA W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Output capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO hFE IC=50ìA IC=1mA IE=50ìA VCB=100V VEB=4V VCE=6V, IC=2mA 180 Testconditons Min 120 120 5 0.5 0.5 560 0.5 2.5 140 V pF MHz Typ Max Unit V V V A A VCE(sat) IC=10mA, IB=1mA Cob fT VCB=12V, IE=0A, f=1MHz VCE=-12V, IE= 2mA, f=100MHz hFE Classification Marking Rank hFE 180 TR R 390 270 TS S 560 www.kexin.com.cn 1