2SC4104

SMD S MD Type Transistors IC NPN Epitaxial Planar Silicon Transistor 2SC4104 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 High fT. Small reverse transfer capacitance. Adoption of FBET process. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Icp PC Tj Tstg Rating 70 60 4 50 100 200 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Base-collector time constant Output capacitance Reverse transfer capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol ICBO IEBO hFE fT rbb,cc Cob Cre Testconditons VCB = 40V, IE=0 VEB = 3V, IC=0 VCE = 10V , IC = 10mA VCE = 10V , IC = 10mA VCE = 10V , IC = 10mA VCB = 10V , f = 1.0MHz VCB = 10V , f = 1.0MHz 60 350 700 8 1.3 1.0 0.5 1.0 70 60 4 Min Typ Max 0.1 1.0 270 MHz ps pF pF V V V V V Unit ìA ìA VCE(sat) IC = 20mA , IB = 2mA VBE(sat) IC = 20mA , IB = 2mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 hFE Classification Marking Rank hFE 60 3 120 90 YY 4 180 135 5 270 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1