2SC4116

SMD S MD Type Silicon NPN Epitaxial 2SC4116 Transistors IC Features High voltage and high current: VCEO = 50 V, IC = 150 mA (max). Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ). High hFE: hFE = 70 700. Low noise: NF = 1dB (typ.), 10dB (max). Small package. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50 5 150 30 100 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Collector-emitter on resistance Symbol ICBO IEBO hFE Testconditons VCB = 60V, IE = 0 VEB = 5V, IC = 0 VCE = 6V, IC = 2mA 70 0.1 80 2.0 1.0 3.5 10 Min Typ Max 0.1 0.1 700 0.25 V MHz pF dB Unit ìA ìA VCE (sat) IC = 100mA, IB = 10mA fT Cob NF VCE = 10V, IC = 1mA VCB = 10V, IE = 0, f = 1MHz VCE = 6V, IC = 0.1mA, f = 1kHz, Rg = 10kÙ hFE Classification Marking hFE LO 70 140 LY 120 240 LG 200 400 LL 350 700 www.kexin.com.cn 1