2SC4135

S MD Type High-Voltage Switching Applications 2SC4135 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High breakdown voltage and large current capacity. Fast switching speed. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 120 100 6 2 3 1 150 -55 to +150 Unit V V V A A W 3 .8 0 www.kexin.com.cn 1 SMD Type 2SC4135 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = 100V, IE=0 VEB = 4V, IC=0 VCE =5V , IC = 100mA VCE = 10V , IC = 100mA VCB = 10V , f = 1.0MHz Transistors Min Typ Max 100 100 Unit nA nA 100 120 16 0.13 0.85 120 100 6 80 400 MHz pF 0.4 1.2 V V V V V ns VCE(sat) IC = 1A , IB = 100mA VBE(sat) IC = 1A , IB = 100mA V(BR)CBO IC = 10ìA , IE = 0 V(BR)CEO IC = 1mA , RBE = V(BR)EBO IE = 10ìA , IC = 0 ton Storage time tstg 1000 ns Fall time tf 50 ns hFE Classification Rank hFE R 100 200 S 140 280 T 200 400 2 www.kexin.com.cn